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November 2013
FQPF8N60C
N-Channel QFET ? MOSFET
600 V, 7.5 A, 1.2 Ω
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild s proprietary,
planar stripe, DMOS technology. This advanced
technology has been especially tailored to minimize on-
state resistance, provide superior switching performance,
and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power
factor correction, electronic lamp ballasts based on half
bridge topology.
Features
? 7 .5 A, 60 0 V, R DS(on) = 1.2 Ω (Max.) @ V GS = 10 V,
I D = 3.75 A
? Low G ate C harge ( Typ. 28 nC)
? Low Crss ( Typ. 12 pF)
? 100% A valanche T ested
D
D
G
S
TO-220F
G
S
= 25 C unless otherwise noted.
Absolute Maximum Ratings T
C
o
Symbol
V DSS
Drain-Source Voltage
Parameter
FQPF8N60C
600
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
7.5 *
4.6 *
A
A
I DM
Drain Current
- Pulsed
(Note 1)
30 *
A
V GSS
Gate-Source Voltage
± 30
V
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T C = 25°C)
- Derate above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
230
7.5
14.7
4.5
48
0.38
mJ
A
mJ
V/ns
W
W/°C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 " from case for 5 seconds
-55 to +150
300
°C
°C
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction-to-Case , Max.
Thermal Resistance, Junction-to-Ambient , Max.
FQPF8N60C
2.6
62.5
Unit
°C / W
°C / W
?2004 Fairchild Semiconductor Corporation
FQPF8N60C Rev. C0
1
www.fairchildsemi.com
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